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  • 20171005_083821_v1
    Brolis starts a new R&D division for silicon photonics in Belgium

    Brolis Semiconductors to open a new R&D division for silicon photonics in Ghent, Belgium.   October 10th , 2017. Ghent, Belgium / Vilnius, Lithuania.  UAB Brolis Semiconductors is proud to announce the incorporation of a new R&D division – Brolis Semiconductors BVBA in Ghent, Belgium. The Belgian entity will focus on the design and development […]

    Brolis Semiconductors to open a new R&D division for silicon photonics in Ghent, Belgium.

     

    October 10th , 2017. Ghent, Belgium / Vilnius, Lithuania.  UAB Brolis Semiconductors is proud to announce the incorporation of a new R&D division – Brolis Semiconductors BVBA in Ghent, Belgium. The Belgian entity will focus on the design and development of novel cutting-edge integrated photonic systems, combining Brolis proprietary III-V technology of long-wave infrared light sources and CMOS compatible photonic integrated circuit technology. CMOS technology is the most widely used and most developed technology for producing today’s integrated circuits used in every electronic device at very large volumes resulting in low cost/chip and widespread abundance.  Special emphasis is directed towards development of a new OEM GaSb/Silicon-on-insulator system-on-a-chip laser sensor technology for sensing applications in the 1.5 – 3.5 micron spectral range and beyond for healthcare and industrial markets.

    “Brolis is delighted to add photonic integrated circuit technology to the existing technology portfolio – we believe it provides a new dimension to our existing III-V semiconductor technology. The addition of silicon technology to GaSb is expected to pave the way to an integrated hybrid chip technology with completely new functionality – such as OEM remote laser sensors for industrial and healthcare applications with a footprint of few mm2, which could enter any handheld, wearable device platform offering features not available today. We are particularly happy to land in Ghent – a world famous location for silicon photonics technology research. Successful cooperation with the Photonics Research Group provided a decisive push towards making directional efforts in commercialization of GaSb/SOI technology. We feel like we’re in good company in Ghent says Augustinas Vizbaras, co-founder and Head of Chip Technology at Brolis Semiconductors.

    “Over the years Brolis has managed to bring GaSb-based laser diode technology to an industrial level with beyond state-of-the art device performance and scale. The next big step is to merge these GaSb chips as key components with photonic integrated circuit technology based on CMOS compatible silicon-on-insulator technology. Moreover, we should bring it to an industrial level, suitable for consumer market applications”, says Dr. Andreas De Groote, who is to lead the design effort of the photonic integrated circuit technology at the new location.

    “While silicon photonics has predominantly been studied for optical transceivers, there are fantastic opportunities in the field of sensing as well. We believe the combination of GaSb III-V opto-electronics and silicon photonics can enable many applications in this domain.” says Prof. Gunther Roelkens from the Photonics Research Group at UGent – imec.

    Thomas Castrel, economic counsellor at the Vilnius office of Flanders Investment & Trade, the export and investment promoting agency of the Flemish government (Belgium), welcomes the opening of an R&D unit of Brolis Semiconductors in the Flemish city of Ghent: “this investment testifies of the strong reputation of Flanders in photonics R&D. Companies are choosing the Flemish region for R&D activities because of the presence of world class universities and research institutes combined with a friendly fiscal environment for research driven businesses. We are very happy that Brolis Semiconductors, a flagship company of Lithuania, has been developing fruitful cooperation with the university in Ghent for many years and that this is now resulting in a new office in Flanders.”

     

    For more information, contact Augustinas Vizbaras, augustinas.vizbaras_at_ brolis-semicon.com

  • Pirma sviesa_2013.03.11_2
    Brolis completes buy-out of shares from VC fund LitCapital

    September 14, 2017.  Brolis Semiconductors completed the buy-out of shares from VC fund LitCapital. The share buy-back process was initiated by the founders in 2015 by attracting long-term investors lead by Lithuanian high-tech laser companies Light Conversion, Eksma and ARP Invest. Brolis is currently controlled by Vizbaras family, Light Conversion, Eksma and ARP Invest. for more […]

    September 14, 2017.  Brolis Semiconductors completed the buy-out of shares from VC fund LitCapital. The share buy-back process was initiated by the founders in 2015 by attracting long-term investors lead by Lithuanian high-tech laser companies Light Conversion, Eksma and ARP Invest. Brolis is currently controlled by Vizbaras family, Light Conversion, Eksma and ARP Invest.

    for more information: info

  • 19955831_1597093890343552_6204670329794470841_o
    Brolis founders receive Order of Merit from the President

    July 5th, 2017, Vilnius, Lithuania. Brolis founders – Vizbaras brothers received state award “Order of Merit Knight’s Cross” from H.E. The President of Lithuania Dalia Grybauskaitė. The award was given for continuous innovation and promotion of Lithuania’s name globally. Award ceremony took place at the Presidential Palace in Vilnius, Lithuania.  

    July 5th, 2017, Vilnius, Lithuania. Brolis founders – Vizbaras brothers received state award “Order of Merit Knight’s Cross” from H.E. The President of Lithuania Dalia Grybauskaitė. The award was given for continuous innovation and promotion of Lithuania’s name globally.

    Award ceremony took place at the Presidential Palace in Vilnius, Lithuania.

     

Upcomming Events

  • SPIE DSS esd
    SPIE Defense, Security & Sensing 2017, Warsaw, Poland

    September 11-14, 2017. Brolis Semiconductors will attend the SPIE DSS conference in Warsaw, Poland and will give an invited talk on company’s recent developments in the field of compact direct-diode based directional infrared countermeasures in the band I ( 2.1 micron). The talk will be presented by Brolis Sr. engineer Edgaras Dvinelis. The talk will take […]

    September 11-14, 2017. Brolis Semiconductors will attend the SPIE DSS conference in Warsaw, Poland and will give an invited talk on company’s recent developments in the field of compact direct-diode based directional infrared countermeasures in the band I ( 2.1 micron). The talk will be presented by Brolis Sr. engineer Edgaras Dvinelis.

    The talk will take place at the conference “Technologies for Optical Countermeasures”, session 4: Lasers and Sources on Tuesday, September 12, 2017.

    Compact 2100 nm laser diode module for next-generation DIRCM (Invited Paper)
    Paper 10435-11
    Author(s): Edgaras Dvinelis, Mindaugas Greibus, Augustinas Trinkūnas, Greta Naujokaite, Augustinas Vizbaras, Brolis Semiconductors UAB (Lithuania); Dominykas Vizbaras, Brolis Photonics Solutions Ltd. (United Kingdom); Kristijonas Vizbaras, Brolis Semiconductors UAB (Lithuania)

    Compact high-power 2100 nm laser diode module for next-generation directed infrared countermeasure (DIRCM) systems is presented. Next-generation DIRCM systems require compact, light-weight and robust laser modules which could provide intense IR light emission capable of disrupting the tracking sensor of heat-seeking missile. Currently used solid-state laser solutions for mid-IR band are bulky and heavy making them difficult to implement in smaller form-factor DIRCM systems. Recent development of GaSb laser diode technology greatly improved optical output powers and efficiencies of laser diodes working in 1900 – 2450 nm band while also maintaining very attractive size, weight and power characteristics. 2100 nm laser diode module presented in this work performance is based on high-efficiency broad emitting area GaSb laser diode technology. Each laser diode emitter is able to provide 1 W of CW output optical power with working point efficiency up to 20% at temperature of 20 °C. For output beam collimation custom designed fast-axis collimator and slow-axis collimator lenses were used. These lenses were actively aligned and attached using UV epoxy curing. Beam divergence in fast-axis is 2-3 mrad full angle (1/e2) while slow axis is limited to ~8 mrad full angle (1/e2) due to lower quality of the beam. Total 2 emitters stacked vertically were used in the 2100 nm laser diode module. Final optical output power of the module goes up to 2 W with working point efficiency up to 20% at temperature of 20 °C. Output beam radiant intensity goes up to 100 kW/str depending on the level of collimated beam divergence. Total dimensions of the laser diode module are below 40 x 30 x 20 mm (L x W x H) with a weight of <50 grams. Finally output beam is bore-sighted to mechanical axes of the module housing allowing for easy integration into next-generation DIRCM systems.
  • logo_laser
    Laser World of Photonics 2017, Munich, Germany

    June 26 – 29, 2017 Munich, Germany. Brolis Semiconductors will be exhibiting in the Laser World of Photonics 2017 in Munich, Germany. The exhibition will be held in Messe Munich on 26th-29th of June. Our company booth is located in Hall B3, booth #403B in the Lithuanian stand. We encourage visiting us to learn about our […]

    June 26 – 29, 2017 Munich, Germany. Brolis Semiconductors will be exhibiting in the Laser World of Photonics 2017 in Munich, Germany. The exhibition will be held in Messe Munich on 26th-29th of June. Our company booth is located in Hall B3, booth #403B in the Lithuanian stand. We encourage visiting us to learn about our new products and capabilities such as:

    – Broadband gain-chips for spectroscopy in the 800 nm – 2500 nm wavelength range

    – High-power CW laser diodes in the 1800 nm – 3000 nm range

    – OEM 2.1 micron integrated laser modules for Directional Infrared Countermeasure applications

    – Custom wafer, custom chip, custom module requirements in our specialty ~ 2 – 3 micron range.

    If you wish to schedule a meeting, please send us an e-mail to info

  • pwo_2017
    SPIE Photonics West 2017, San Francisco USA

    Brolis Semiconductors will be exhibiting at world’s largest photonics exhibition SPIE Photonics West 2017 in San Francisco, California. The exhibition will take place in Moscone Center from 31st Jan. – 2nd Feb. Brolis booth is located in North Hall D, #4565. Feel free to visit us and discuss latest developments in infrared optoelectronics. In order to […]

    Brolis Semiconductors will be exhibiting at world’s largest photonics exhibition SPIE Photonics West 2017 in San Francisco, California. The exhibition will take place in Moscone Center from 31st Jan. – 2nd Feb.

    Brolis booth is located in North Hall D, #4565. Feel free to visit us and discuss latest developments in infrared optoelectronics. In order to schedule a meeting – please contact us via: info

    In addition, Brolis engineer Ieva Šimonytė will give a talk on 29th of January as part of the OPTO session:

    Session 4:
    Mid-Infrared Interband Lasers and Applications
    Sunday 29 January 2017
    3:30 PM – 5:55 PM
    Location: Room 2011 (West Level 2)

    Single-frequency infrared tunable lasers based on angled-facet gain-chips for sensing applications
    Paper 10111-17
    Time: 3:50 PM – 4:05 PM
    Author(s): Ieva Šimonyte, Laurynas Andrulionis, Justinas Aleknavicius, Edgaras Dvinelis, Augustinas Trinkūnas, Mindaugas Greibus, Augustinas Vizbaras, Kristijonas Vizbaras, Brolis Semiconductors UAB (Lithuania)

     

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