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MIR 1800-3400 nm
NIR 800-1100 nm
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    New 980 nm high-power CW laser diodes upt 12 W output power available!

    April 29, 2015. Brolis Semiconductors introduces new product line of near-infrared (NIR) CW high-power laser diodes. Company’s new 980 nm single emitters offer state-of-the-art performance with up to 12 W of CW output power per single emitter. Different package options are available such as C-mount, F-mount or a simple TO5. Impressive performance of 7 W CW […]

    April 29, 2015. Brolis Semiconductors introduces new product line of near-infrared (NIR) CW high-power laser diodes. Company’s new 980 nm single emitters offer state-of-the-art performance with up to 12 W of CW output power per single emitter. Different package options are available such as C-mount, F-mount or a simple TO5.

    Impressive performance of 7 W CW output power in a very compact TO5 package is achieved and available from our stock. New wavelengths are coming up soon!

    For more information and datasheets, please go to our laser diode product page: 9XX laser diode

     

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    Ultra-broad gain and high-power mid-infrared SAF gain-chips from Brolis

    January 28, 2015. Brolis Semiconductors introduces ultra-broad gain and high ouptut power single-angled-facet (SAF) gain chips for most demanding tunable spectroscopy applications in the 1900 nm – 2500 nm range.

    January 28, 2015. Brolis Semiconductors introduces ultra-broad gain and high ouptut power single-angled-facet (SAF) gain chips for most demanding tunable spectroscopy applications in the 1900 nm – 2500 nm range. New chips are based on Brolis proprietary GaSb type-I material and chip technology delivering beyond state-of-the art performance.

    Novel gain chips feature > 100 nm/chip tunable single-mode emission with side-mode suppresion ration > 25 dB and CW output power in the 5 – 20 mW range. Output beam is strickly TE00. These products come packaged in TO5 or C-mount package. Output beam direction is normal to the package output plane. To download a short brochure featuring the new product, click here.

    For typical datasheets, please search the SAF gain-chip page in our components page: MIR_components

     

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    Brolis adds new products in the 2100 nm – 2700 nm wavelength range

    November 17, 2014. Vilnius, Lithuania. Brolis Semiconductors introduces new laser diode products in the 2000 nm – 2700 nm wavelength range.

    November 17, 2014. Vilnius, Lithuania. Brolis Semiconductors introduces  new laser diode products in the 2000 nm – 2700 nm wavelength range. New laser diodes include > 0.5 W CW output power at 20 deg C in the 2200 nm – 2500 nm wavelength range and 20 – 80 mW CW output power for single-TE00 mode devices up to 2700 nm wavelength.

    Brolis offers several package option: as bare chip, C-mount or hermetic full-copper body TO-5 can. More info on the products can be found in the laser diode section here: LaserDiodes.

    In addition to the existing Fabry-Perot devices, Brolis also offers superluminescent ASE sources based on angled facet chip technology. These offer superior output power and ultra-wide gain bandwidth for spectroscopy applications either as stand-alone SLDs or in the external cavity setup fur broadband tuning. Additional wavelengths of 2210 nm and 2650 nm are available. ASE sources.

    Amplified spontaneous emission (ASE) source are Fabry-Perot chips with angled facet emission, realized by forming a bent waveguide to reduce the facet reflectivity and allow ASE emission in almost entire current range. With the addition of low-reflectivity AR facet coating, total mode reflectivity can be as low as 10-4, opening path to tunable spectroscopy application, for example using external cavity configuration (ECL). Exact tuning range depends on the emission wavelength, however >100 nm tuning is typical in the ECL setup.

    For more info and custom requests, please enquire directly at: info

Upcomming Events

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    June 22-25, 2015, Munich, Germany. Laser World of Photonics 2015

    June 22 – 25, Munich, DE, 2015. Hall 3, Booth #556   Contact us: info  More information about the event: LWOP15  

    June 22 – 25, Munich, DE, 2015.
    Hall 3, Booth #556   Contact us: info 
    More information about the event: LWOP15

     

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    Feb. 10-12, 2015. San Francisco, USA. SPIE Photonics West 2015.

            February 10 – 12, San Francisco, USA, 2015. Booth #4102   Contact us: info  More information about the event: PhoWest15

           
    February 10 – 12, San Francisco, USA, 2015.
    Booth #4102   Contact us: info 
    More information about the event: PhoWest15

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