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  • UGhent_Brolis_ECL_GaSbSOI
    UGent and Brolis team demonstrates first 2.0X um widely tunable GaSb/SOI laser

    December 8, 2016.  Latest developments of widely tunable 2 micron CW laser based on hybrid GaSb/SOI platform have been published by Optics Express. A joint effort between Photonics Research Group from Ghent University (Belgium) led by Prof. Gunther Roelkens and Brolis Semiconductors resulted in demonstration of high performance 2.0x µm widely tunable external cavity lasers realized by […]

    December 8, 2016.  Latest developments of widely tunable 2 micron CW laser based on hybrid GaSb/SOI platform have been published by Optics Express. A joint effort between Photonics Research Group from Ghent University (Belgium) led by Prof. Gunther Roelkens and Brolis Semiconductors resulted in demonstration of high performance 2.0x µm widely tunable external cavity lasers realized by combining a GaSb gain chip with a silicon photonics waveguide circuit for wavelength selection are demonstrated. Wavelength tuning over 58 nm from 2.01 to 2.07 µm is demonstrated. In the silicon photonic integrated circuit, laser feedback is realized by using a silicon Bragg grating and continuous tuning is realized by using two thermally tuned silicon microring resonators (MRRs) and a phase section. The uncooled laser has maximum output power of 7.5 mW and threshold current density of 0.8 kA/cm2. The effect of the coupling gap of the MRRs on tunable laser performance is experimentally assessed. A side mode suppression ratio better than 52 dB over the full tuning range and in the optimum operation point of more than 60 dB is achieved for the laser with weakly coupled MRRs.

     

    The paper has been recently published by Optics Express:

    Ruijung Wang, Aditya Malik, Ieva Šimonytė, Augustinas Vizbaras, Kristijonas Vizbaras,and Gunther Roelkens, ” Compact GaSb/silicon-on-insulator 2.0x um widely tunable external cavity lasers”, Optics Express, Vol 24, No. 25, pp. 28977-28986, (2016). More details can be found: GaSb/SOI paper

     

     

  • OBSERVER and illuminator
    Brolis awarded Lithuanian MOD contract to supply advanced E-O systems

    December 12, 2016. Vilnius, Lithuania. Brolis Semiconductors was awarded with a contract from Lithuanian Ministry-of-Defence (MOD) to supply advanced E-O systems to the Lithuanian Armed Forces. The contract is divided in three parts, totalling to a maximum amount of about 3.5 M EUR. The details of the contract and the specification of the E-O systems […]

    December 12, 2016. Vilnius, Lithuania. Brolis Semiconductors was awarded with a contract from Lithuanian Ministry-of-Defence (MOD) to supply advanced E-O systems to the Lithuanian Armed Forces. The contract is divided in three parts, totalling to a maximum amount of about 3.5 M EUR. The details of the contract and the specification of the E-O systems is confidential. First systems are expected to rach the Armed Forces in 2017.

     

  • Brussels, Belgium, 1 March, 2016
CS International Conference
Photo: Babylonia - Daniel Osorio
    SensAline tunable laser wins the Innovation Award at CSindustry Awards 2016!

    March 1, 2016. Brussels, Belgium. Brolis Semiconductors new SensAline tunable laser declared as a winner  at the CSindustry 2016 awards in the Innovation Award category. CSindstry Awards ceremony took place during the annual compound semiconductor industry conference CS-international 2016, held in Brussels, Belgium. The CSindustry awards ceremony is organized by Compound Semiconductor magazine, which unites the […]

    March 1, 2016. Brussels, Belgium. Brolis Semiconductors new SensAline tunable laser declared as a winner  at the CSindustry 2016 awards in the Innovation Award category. CSindstry Awards ceremony took place during the annual compound semiconductor industry conference CS-international 2016, held in Brussels, Belgium.

    The CSindustry awards ceremony is organized by Compound Semiconductor magazine, which unites the global III-V semiconductor community. Brolis was shortlisted for the innovation award nomination along with industry giants – Qorvo (USA) and Osram ( Germany) – and was declared as a winner!

    Brolis team is extremely proud and honoured to receive the award and would like to thank the supporters from the global compound semiconductor community for the votes!

    We hope to post more information and pictures from the event as soon as it becomes available!

    more information on CSindustry awards 2016 can be found here: CSawards

    more information about the CS-international conference can be found here: CS-international

    Brussels, Belgium, 1 March, 2016 CS International Conference Photo: Babylonia - Daniel Osorio

    Brussels, Belgium, 1 March, 2016
    CS International Conference
    Photo: Babylonia – Daniel Osorio

Upcomming Events

  • pwo_2017
    SPIE Photonics West 2017, San Francisco USA

    Brolis Semiconductors will be exhibiting at world’s largest photonics exhibition SPIE Photonics West 2017 in San Francisco, California. The exhibition will take place in Moscone Center from 31st Jan. – 2nd Feb. Brolis booth is located in North Hall D, #4565. Feel free to visit us and discuss latest developments in infrared optoelectronics. In order to […]

    Brolis Semiconductors will be exhibiting at world’s largest photonics exhibition SPIE Photonics West 2017 in San Francisco, California. The exhibition will take place in Moscone Center from 31st Jan. – 2nd Feb.

    Brolis booth is located in North Hall D, #4565. Feel free to visit us and discuss latest developments in infrared optoelectronics. In order to schedule a meeting – please contact us via: info

    In addition, Brolis engineer Ieva Šimonytė will give a talk on 29th of January as part of the OPTO session:

    Session 4:
    Mid-Infrared Interband Lasers and Applications
    Sunday 29 January 2017
    3:30 PM – 5:55 PM
    Location: Room 2011 (West Level 2)

    Single-frequency infrared tunable lasers based on angled-facet gain-chips for sensing applications
    Paper 10111-17
    Time: 3:50 PM – 4:05 PM
    Author(s): Ieva Šimonyte, Laurynas Andrulionis, Justinas Aleknavicius, Edgaras Dvinelis, Augustinas Trinkūnas, Mindaugas Greibus, Augustinas Vizbaras, Kristijonas Vizbaras, Brolis Semiconductors UAB (Lithuania)

     

  • iNOW2016
    Invited talk at international conference iNOW 2016

    April 11, 2016. Augustinas Vizbaras, Brolis co-founder and head of chip technology is to give an invited talk at international Nano-Optoelectronics Workshop iNOW 2016, that will take place in Munich and Wurzburg, Germany on July 26th – August 5th, 2016. The conference is co-organized by Walter Schottky Institute of the Technische Universität München (TUM) and the Julius Maximilian University of […]

    April 11, 2016. Augustinas Vizbaras, Brolis co-founder and head of chip technology is to give an invited talk at international Nano-Optoelectronics Workshop iNOW 2016, that will take place in Munich and Wurzburg, Germany on July 26th – August 5th, 2016.

    The conference is co-organized by Walter Schottky Institute of the Technische Universität München (TUM) and the Julius Maximilian University of Würzburg.

    More details can be found on the official site of the workshop: iNOW2016

  • 150_logo_noir_vectorized_big
    Brolis CTO to give invited talk at International MBE conference 2016

    March 4, 2016. Brolis CTO Kristijonas Vizbaras is to give an invited talk at MBE 2016 – 19th International Conference on Molecular Beam Epitaxy in Montpellier, France. The International Conference on Molecular Beam Epitaxy (MBE 2016) provides a prominent international forum for reporting new developments in the areas of fundamental and applied molecular beam epitaxy research, […]

    March 4, 2016. Brolis CTO Kristijonas Vizbaras is to give an invited talk at MBE 2016 – 19th International Conference on Molecular Beam Epitaxy in Montpellier, France.

    The International Conference on Molecular Beam Epitaxy (MBE 2016) provides a prominent international forum for reporting new developments in the areas of fundamental and applied molecular beam epitaxy research, including advances in the technique, synthesis of new materials, discovery of new physical properties, formation of novel heterostructures, and the development of innovative devices.

    The program topics are: 

    • MBE fundamentals
    • III-V compounds
    • II-VI compounds
    • Group-IV semiconductors
    • Dilute Nitrides and Bismides
    • Wide Bandgap semiconductors
    • Oxide and Hybrid Epitaxial Systems
    • 2D materials (graphene, MoS2, WS2,…)
    • Spintronics and Topological Materials
    • Nanostructures (QDs, nanowires,..)
    • MBE grown Devices

    Kristijonas talk is titled “GaSb-based optoelectronic devices – new developments in industry”. The conference will take place on September 4-9, 2016 in Montpellier, France.

     

    For more information about the conference, please, visit the official website: MBE2016

     

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