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  • Pirma sviesa_2013.03.11_2
    Brolis completes buy-out of shares from VC fund LitCapital

    September 14, 2017.  Brolis Semiconductors completed the buy-out of shares from VC fund LitCapital. The share buy-back process was initiated by the founders in 2015 by attracting long-term investors lead by Lithuanian high-tech laser companies Light Conversion, Eksma and ARP Invest. Brolis is currently controlled by Vizbaras family, Light Conversion, Eksma and ARP Invest. for more […]

    September 14, 2017.  Brolis Semiconductors completed the buy-out of shares from VC fund LitCapital. The share buy-back process was initiated by the founders in 2015 by attracting long-term investors lead by Lithuanian high-tech laser companies Light Conversion, Eksma and ARP Invest. Brolis is currently controlled by Vizbaras family, Light Conversion, Eksma and ARP Invest.

    for more information: info

  • 19955831_1597093890343552_6204670329794470841_o
    Brolis founders receive Order of Merit from the President

    July 5th, 2017, Vilnius, Lithuania. Brolis founders – Vizbaras brothers received state award “Order of Merit Knight’s Cross” from H.E. The President of Lithuania Dalia Grybauskaitė. The award was given for continuous innovation and promotion of Lithuania’s name globally. Award ceremony took place at the Presidential Palace in Vilnius, Lithuania.  

    July 5th, 2017, Vilnius, Lithuania. Brolis founders – Vizbaras brothers received state award “Order of Merit Knight’s Cross” from H.E. The President of Lithuania Dalia Grybauskaitė. The award was given for continuous innovation and promotion of Lithuania’s name globally.

    Award ceremony took place at the Presidential Palace in Vilnius, Lithuania.

     

  • UGhent_Brolis_ECL_GaSbSOI
    UGent and Brolis team demonstrates first 2.0X um widely tunable GaSb/SOI laser

    December 8, 2016.  Latest developments of widely tunable 2 micron CW laser based on hybrid GaSb/SOI platform have been published by Optics Express. A joint effort between Photonics Research Group from Ghent University (Belgium) led by Prof. Gunther Roelkens and Brolis Semiconductors resulted in demonstration of high performance 2.0x µm widely tunable external cavity lasers realized by […]

    December 8, 2016.  Latest developments of widely tunable 2 micron CW laser based on hybrid GaSb/SOI platform have been published by Optics Express. A joint effort between Photonics Research Group from Ghent University (Belgium) led by Prof. Gunther Roelkens and Brolis Semiconductors resulted in demonstration of high performance 2.0x µm widely tunable external cavity lasers realized by combining a GaSb gain chip with a silicon photonics waveguide circuit for wavelength selection are demonstrated. Wavelength tuning over 58 nm from 2.01 to 2.07 µm is demonstrated. In the silicon photonic integrated circuit, laser feedback is realized by using a silicon Bragg grating and continuous tuning is realized by using two thermally tuned silicon microring resonators (MRRs) and a phase section. The uncooled laser has maximum output power of 7.5 mW and threshold current density of 0.8 kA/cm2. The effect of the coupling gap of the MRRs on tunable laser performance is experimentally assessed. A side mode suppression ratio better than 52 dB over the full tuning range and in the optimum operation point of more than 60 dB is achieved for the laser with weakly coupled MRRs.

     

    The paper has been recently published by Optics Express:

    Ruijung Wang, Aditya Malik, Ieva Šimonytė, Augustinas Vizbaras, Kristijonas Vizbaras,and Gunther Roelkens, ” Compact GaSb/silicon-on-insulator 2.0x um widely tunable external cavity lasers”, Optics Express, Vol 24, No. 25, pp. 28977-28986, (2016). More details can be found: GaSb/SOI paper

     

     

Upcomming Events

  • SPIE DSS esd
    SPIE Defense, Security & Sensing 2017, Warsaw, Poland

    September 11-14, 2017. Brolis Semiconductors will attend the SPIE DSS conference in Warsaw, Poland and will give an invited talk on company’s recent developments in the field of compact direct-diode based directional infrared countermeasures in the band I ( 2.1 micron). The talk will be presented by Brolis Sr. engineer Edgaras Dvinelis. The talk will take […]

    September 11-14, 2017. Brolis Semiconductors will attend the SPIE DSS conference in Warsaw, Poland and will give an invited talk on company’s recent developments in the field of compact direct-diode based directional infrared countermeasures in the band I ( 2.1 micron). The talk will be presented by Brolis Sr. engineer Edgaras Dvinelis.

    The talk will take place at the conference “Technologies for Optical Countermeasures”, session 4: Lasers and Sources on Tuesday, September 12, 2017.

    Compact 2100 nm laser diode module for next-generation DIRCM (Invited Paper)
    Paper 10435-11
    Author(s): Edgaras Dvinelis, Mindaugas Greibus, Augustinas Trinkūnas, Greta Naujokaite, Augustinas Vizbaras, Brolis Semiconductors UAB (Lithuania); Dominykas Vizbaras, Brolis Photonics Solutions Ltd. (United Kingdom); Kristijonas Vizbaras, Brolis Semiconductors UAB (Lithuania)

    Compact high-power 2100 nm laser diode module for next-generation directed infrared countermeasure (DIRCM) systems is presented. Next-generation DIRCM systems require compact, light-weight and robust laser modules which could provide intense IR light emission capable of disrupting the tracking sensor of heat-seeking missile. Currently used solid-state laser solutions for mid-IR band are bulky and heavy making them difficult to implement in smaller form-factor DIRCM systems. Recent development of GaSb laser diode technology greatly improved optical output powers and efficiencies of laser diodes working in 1900 – 2450 nm band while also maintaining very attractive size, weight and power characteristics. 2100 nm laser diode module presented in this work performance is based on high-efficiency broad emitting area GaSb laser diode technology. Each laser diode emitter is able to provide 1 W of CW output optical power with working point efficiency up to 20% at temperature of 20 °C. For output beam collimation custom designed fast-axis collimator and slow-axis collimator lenses were used. These lenses were actively aligned and attached using UV epoxy curing. Beam divergence in fast-axis is 2-3 mrad full angle (1/e2) while slow axis is limited to ~8 mrad full angle (1/e2) due to lower quality of the beam. Total 2 emitters stacked vertically were used in the 2100 nm laser diode module. Final optical output power of the module goes up to 2 W with working point efficiency up to 20% at temperature of 20 °C. Output beam radiant intensity goes up to 100 kW/str depending on the level of collimated beam divergence. Total dimensions of the laser diode module are below 40 x 30 x 20 mm (L x W x H) with a weight of <50 grams. Finally output beam is bore-sighted to mechanical axes of the module housing allowing for easy integration into next-generation DIRCM systems.
  • logo_laser
    Laser World of Photonics 2017, Munich, Germany

    June 26 – 29, 2017 Munich, Germany. Brolis Semiconductors will be exhibiting in the Laser World of Photonics 2017 in Munich, Germany. The exhibition will be held in Messe Munich on 26th-29th of June. Our company booth is located in Hall B3, booth #403B in the Lithuanian stand. We encourage visiting us to learn about our […]

    June 26 – 29, 2017 Munich, Germany. Brolis Semiconductors will be exhibiting in the Laser World of Photonics 2017 in Munich, Germany. The exhibition will be held in Messe Munich on 26th-29th of June. Our company booth is located in Hall B3, booth #403B in the Lithuanian stand. We encourage visiting us to learn about our new products and capabilities such as:

    – Broadband gain-chips for spectroscopy in the 800 nm – 2500 nm wavelength range

    – High-power CW laser diodes in the 1800 nm – 3000 nm range

    – OEM 2.1 micron integrated laser modules for Directional Infrared Countermeasure applications

    – Custom wafer, custom chip, custom module requirements in our specialty ~ 2 – 3 micron range.

    If you wish to schedule a meeting, please send us an e-mail to info

  • pwo_2017
    SPIE Photonics West 2017, San Francisco USA

    Brolis Semiconductors will be exhibiting at world’s largest photonics exhibition SPIE Photonics West 2017 in San Francisco, California. The exhibition will take place in Moscone Center from 31st Jan. – 2nd Feb. Brolis booth is located in North Hall D, #4565. Feel free to visit us and discuss latest developments in infrared optoelectronics. In order to […]

    Brolis Semiconductors will be exhibiting at world’s largest photonics exhibition SPIE Photonics West 2017 in San Francisco, California. The exhibition will take place in Moscone Center from 31st Jan. – 2nd Feb.

    Brolis booth is located in North Hall D, #4565. Feel free to visit us and discuss latest developments in infrared optoelectronics. In order to schedule a meeting – please contact us via: info

    In addition, Brolis engineer Ieva Šimonytė will give a talk on 29th of January as part of the OPTO session:

    Session 4:
    Mid-Infrared Interband Lasers and Applications
    Sunday 29 January 2017
    3:30 PM – 5:55 PM
    Location: Room 2011 (West Level 2)

    Single-frequency infrared tunable lasers based on angled-facet gain-chips for sensing applications
    Paper 10111-17
    Time: 3:50 PM – 4:05 PM
    Author(s): Ieva Šimonyte, Laurynas Andrulionis, Justinas Aleknavicius, Edgaras Dvinelis, Augustinas Trinkūnas, Mindaugas Greibus, Augustinas Vizbaras, Kristijonas Vizbaras, Brolis Semiconductors UAB (Lithuania)

     

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