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Brolis Semiconductors develops industry’s only direct diode solution for DIRCM applications in theextended SWIR spectral range. New product solution is driven by Brolis proprietary high-performance GaSb type-I laser diode technology, utilizing proprietary beam combining technique***.

***patent pending

Next-generation Brolis direct diode technology offers ultimate SWaP advantage, offering x100 advantage in weight and x10 in power efficiency vs currently used fiber lasers sources for band-I.

Our technology allows reaching radiant intensity values of 30 kW/sr and beyond with the overall laser module weight < 60 g.

Typical product specifiaction can be found here

For more information, contact us at info.

 

Relevant publications and whitepapers:

1. E. Dvinelis, G. Naujokaitė, M. Greibus, D. Buivydas, A. Trinkūnas, K. Vizbaras, A. Vizbaras, “Band I DIRCM laser based on GaSb direct diode technology,” Proc. SPIE 10637, Laser Technology for Defense and Security XIV, 106370B (4 May 2018); doi: 10.1117/12.2304619; https://doi.org/10.1117/12.2304619

2. E. Dvinelis, G. Naujokaitė, M. Greibus, A. Trinkūnas, K. Vizbaras, A. Vizbaras, “Next generation DIRC< for 2.1-2.3 micron wavelength based on direct-diode GaSb technology,” Proc. SPIE 10514, High-Power Diode Laser Technology XVI, 1051405 (19 February 2018); doi: 10.1117/12.2289425; https://doi.org/10.1117/12.2289425

3. E. Dvinelis, M. Greibus, A. Trinkūnas, G. Naujokaitė, A. Vizbaras, D. Vizbaras, K. Vizbaras, “Compact 2100 nm laser diode module for next-generation DIRCM,” Proc. SPIE 10435, Technologies for Optical Countermeasures XIV, 104350B (5 October 2017); doi: 10.1117/12.2277590; https://doi.org/10.1117/12.2277590

4. E. Dvinelis, T. Žukauskas, M. Kaušylas, A. Vizbaras, K. Vizbaras, D. Vizbaras, “Laser illumination and EP systems for covert surveillance for NIR to SWIR and beyond,” Proc. SPIE 9987, Electro-Optical and Infrared Systems: Technology and Applications XIII, 998703 (21 October 2016); doi: 10.1117/12.2238791; https://doi.org/10.1117/12.2238791

5. E. Dvinelis, A. Trinkūnas, M. Greibus, M. Kaušylas, T. Žukauskas, I. Šimonytė, R. Songaila, A. Vizbaras, K. Vizbaras, “High-performance GaSb laser didoes and diode arrays in the 2.1-3.3 micron wavelength range for sensing and defense applications,” Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 93702E (8 February 2015); doi: 10.1117/12.2076115; https://doi.org/10.1117/12.2076115

6. A. Vizbaras, E. Dvinelis, M. Greibus, A. Trinkunas, D. Kovalenkovas, I. Šimonytė, K. Vizbaras, “High-performance single-spatial mode GaSb type-I laser diodes around 2.1 μm,” Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 899319 (31 January 2014); doi: 10.1117/12.2036523; https://doi.org/10.1117/12.2036523

7. A. Vizbaras, E. Dvinelis, A. Trinkūnas, I. Šimonytė, M. Greibus, M. Kaušylas, T. Žukauskas, R. Songaila, K. Vizbaras, “High-performance mid-infrared GaSb laser diodes for defence and sensing applications,” Proc. SPIE 9081, Laser Technology for Defense and Security X, 90810P (9 June 2014); doi: 10.1117/12.2054493;https://doi.org/10.1117/12.2054493