Brolis Semiconductors develops industry’s only direct diode solution for DIRCM applications in the 2100 – 2300 nm atmospheric window (also known as Band-I). New product solution is driven by Brolis proprietary high-performance GaSb type-I laser diode technology, utilizing proprietary beam combining technique***.

***patent pending

Next-generation Brolis direct diode technology offers ultimate SWaP advantage, offering x100 advantage in weight and x10 in power efficiency vs currently used fiber lasers sources for band-I.

Our technology allows reaching radiant intensity values of 30 kW/sr and beyond with the overall laser module weight < 60 g.

Typical product specifiaction can be found here

For more information, contact us at info.