30XX nn single mode laser diodes are ideal candidates for research, sensing and medical applications. Brolis 3 micron laser diode features CW operatin at RT with 20 mW output in single TE00 mode.
This product platform is based on Brolis proprietary GaSb type-I laser technology. Our cutting edge laser products are developed in company’s state-of-the art cleanroom facility including advanced multi-wafer molecular beam epitaxy on market’s largest 3-inch GaSb substrate platform. We monitor and control every process: from device simulation, wafer growth, chip fabrication, chip testing and final package. With years of experience in developing beyond-state-of-the-art mid infrared laser technology – we are able to deliver most cutting edge components to market.
Available in C-mount package.
Contact us for more info.
|Wavelength||nm||2960 - 3000|
|Beam divergence ( FWHM )||degrees||15 SA / 65 FA|