830 nm gain-chip

Description

Brolis 8XX nm gain-chip product familyt features single-angled facet (SAF) chip design and ultra-low reflectivity AR coatings for low-spectral ripple performance around popular center wavelengths such as 820 nm, 830 nm and 850 nm. The chip is based on MBE grown AlGaInAs/GaInAs/GaAs material system. Current design features double-pass SAF cavity with HR/AR coatings and hermetic 9 mm TO can package. For custom inquires, we can offer open packages and custom facet coatings such as AR/ULAR, ULAR/ULAR.

Current stock design has gain-peak around 830 nm with accessible bandwidth of > 50 nm. Typical Littrow power reaches > 140 mW CW in single mode from 805 nm – 855 nm range.

Typical applications: cold atom spectroscopy, seeding, Raman spectroscopy.

For more detailed information on 830 nm gain-chip and custom inquiries, please contact us at: info


Applications

  • Security
  • Sensing
  • Medical
  • Research

Downloads

Typical Specifications

Physical properties
Cavity length mm 1
Emitter width um 3
Electrical properties
Voltage V < 2
Threshold current mA 100 - 350
Max current mA < 600 mA
Optical properties
Center wavelength nm 830
Tuning range nm 805 - 855
Output power (Littrow) mW 100 - 150
Mode TE00