Brolis 8XX nm gain-chip product familyt features single-angled facet (SAF) chip design and ultra-low reflectivity AR coatings for low-spectral ripple performance around popular center wavelengths such as 820 nm, 830 nm and 850 nm. The chip is based on MBE grown AlGaInAs/GaInAs/GaAs material system. Current design features double-pass SAF cavity with HR/AR coatings and hermetic 9 mm TO can package. For custom inquires, we can offer open packages and custom facet coatings such as AR/ULAR, ULAR/ULAR.
Current stock design has gain-peak around 830 nm with accessible bandwidth of > 50 nm. Typical Littrow power reaches > 140 mW CW in single mode from 805 nm – 855 nm range.
Typical applications: cold atom spectroscopy, seeding, Raman spectroscopy.
For more detailed information on 830 nm gain-chip and custom inquiries, please contact us at: info
|Threshold current||mA||100 - 350|
|Max current||mA||< 600 mA|
|Tuning range||nm||805 - 855|
|Output power (Littrow)||mW||100 - 150|