21XX nm high-power CW laser diodes are ideal candidates for SWIR illumination, missile defense, IRCM and LIDAR applications. Brolis 2 micron high power laser products feature 1 W CW output power from broad area single emitter to 10 W CW output power from a 2 micron high power laser bar. State-of-the-art wall-plug efficiency up to 20% and 0.3 W/A slope efficiency at room-temperature.
2 micron high power laser products are available in TO5, C-mount and CS-mount package options.
For more information, please contact us at info.
This product platform is based on Brolis proprietary GaSb type-I laser technology. Our cutting edge laser products are developed in company’s state-of-the art cleanroom facility including advanced multi-wafer molecular beam epitaxy on market’s largest 3-inch GaSb substrate platform. We monitor and control every process: from device simulation, wafer growth, chip fabrication, chip testing and final package. With years of experience in developing beyond-state-of-the-art mid infrared laser technology – we are able to deliver most cutting edge components to market.
|Cavity length||mm||1.0 / 1.5 / 2.0|
|Emitter width||um||120 / 150|
|Threshold current||mA||250 - 300|
|E-O efficiency||%||20 - 30|
|Output power||W||0.8 - 1.2|
|Beam divergence||degrees||15 SA / 50 FA|