Molecular beam epitaxy
Brolis Semiconductors runs an all in-house industrial facility for molecular beam epitaxy (MBE) of advanced III-V semiconductor compounds. We are known to be the best engineering house globally for complex materials for infrared optoelectronics technology or ultra-high speed electronics.
Brolis facility feature:
– Industrial multi-wafer MBE facility based on Veeco Gen200Edge for AlGaInAsSb materials
– Muti-wafer mode: 4×4-inch, 7×3-inch, 13×2-inch single growth capacity
– In-house HRXRD, EL, PL, Van Der Pauw; FTIR.
Wafer growth, qualification and packaging is carried out in the class ISO 6 (class 1000) cleanroom environment.
We have experience in developing and scaling epitaxy based on different alloy combinations: GaAs/AlGaAs/InGaAs, AlInAs/InGaAs/InP, AlGaAsSb/GaInAsSb/GaSb, InAs/GaSb/AlSb, etc
Our experimental room-temperature electron mobility is up to 9000 cm2/(Vs) for GaInAs/AlGaAs/GaAs and 26 000 cm2/(Vs) for InAs/AlSb/GaAs structures.