1940 nm high-power CW laser diode


19XX nm high-power CW laser diodes are ideal candidates for medical applications due to strong water absorption at 1940nm as well as, missile defense, IRCM and LIDAR applications. Brolis 1940 nm laser products are available as single-emitters and bars. Single-emitter 1940 nm laser product features 1 W CW output power with WPE of 15 % whereas standard laser diode bars reach 15 W CW on passively coolde heatsink.

Our 1940 nm laser products are available in TO5, C-mount and CS-mount package options.

For more information, please contact us at info.

This product platform is based on Brolis proprietary GaSb type-I laser technology. Our cutting edge laser products are developed in company’s state-of-the art cleanroom facility including advanced multi-wafer molecular beam epitaxy on market’s largest 3-inch GaSb substrate platform. We monitor and control every process: from device simulation, wafer growth, chip fabrication, chip testing and final package. With years of experience in developing beyond-state-of-the-art mid infrared laser technology – we are able to deliver most cutting edge components to market.


  • Security
  • Sensing
  • Medical
  • Research


Typical Specifications

Physical properties
Cavity length mm 1.5 / 2.0
Emitter width um 120 / 150
Electrical properties
Threshold current mA 650
E-O efficiency % 15-20
Voltage V 1.7
Optical properties
Wavelength nm 1940
Output power W 1
Beam divergence degrees 15 SA / 50 FA
Polarization TE