2M2DCM 2.1 micron DIRCM laser module


Brolis produces high-performance long wavelength laser diodes in the wavelength range 1.8-3 microns. Using our advanced capability of all-in-house technology, we proudly introduce integrated laser module 2M2DCM for Directional Infrared Countermeasure (DIRCM) applications in the extended SWIR spectral range based purely on direct-diode technology!

Replacing bulky, inefficient and highly nonlinear fiber-laser based solutions, we present industry’s first direct-diode 2.1 micron DIRCM laser module with a fraction of a size and weight to provide anti-missile protection for airborne applications like never before. Whenever you fly over hostile territories – we’ve got your back!

As a infrared laser diode and E-O system manufacturer, Brolis offers flexible OEM module solutions based on your needs. We have capability to adapt your requirements in terms of optical, mechanical and electrical requirements.

Brolis DIRCM module is based on integrated multi-emitter concept which allows to reach output powers from 1 W to 5 W based on the number of emitters for band I countermeasure applications.

Brolis uses advanced robotic packaging and assembly infrastructure such as: high-end die bonder (Ficontec BL2000), wirebonder (Delvotec) and 6-axis micro-optics assembler with active alignment, lens attach and UV curing (Nanosystec Nanoglue) customized for access to wavelengths beyond 2 microns.

For more information, contact us at info.

Relevant publications and whitepapers:

1. E. Dvinelis, G. Naujokaitė, M. Greibus, D. Buivydas, A. Trinkūnas, K. Vizbaras, A. Vizbaras, “Band I DIRCM laser based on GaSb direct diode technology,” Proc. SPIE 10637, Laser Technology for Defense and Security XIV, 106370B (4 May 2018); doi: 10.1117/12.2304619; https://doi.org/10.1117/12.2304619

2. E. Dvinelis, G. Naujokaitė, M. Greibus, A. Trinkūnas, K. Vizbaras, A. Vizbaras, “Next generation DIRC< for 2.1-2.3 micron wavelength based on direct-diode GaSb technology,” Proc. SPIE 10514, High-Power Diode Laser Technology XVI, 1051405 (19 February 2018); doi: 10.1117/12.2289425; https://doi.org/10.1117/12.2289425

3. E. Dvinelis, M. Greibus, A. Trinkūnas, G. Naujokaitė, A. Vizbaras, D. Vizbaras, K. Vizbaras, “Compact 2100 nm laser diode module for next-generation DIRCM,” Proc. SPIE 10435, Technologies for Optical Countermeasures XIV, 104350B (5 October 2017); doi: 10.1117/12.2277590; https://doi.org/10.1117/12.2277590

4. E. Dvinelis, T. Žukauskas, M. Kaušylas, A. Vizbaras, K. Vizbaras, D. Vizbaras, “Laser illumination and EP systems for covert surveillance for NIR to SWIR and beyond,” Proc. SPIE 9987, Electro-Optical and Infrared Systems: Technology and Applications XIII, 998703 (21 October 2016); doi: 10.1117/12.2238791; https://doi.org/10.1117/12.2238791

5. E. Dvinelis, A. Trinkūnas, M. Greibus, M. Kaušylas, T. Žukauskas, I. Šimonytė, R. Songaila, A. Vizbaras, K. Vizbaras, “High-performance GaSb laser didoes and diode arrays in the 2.1-3.3 micron wavelength range for sensing and defense applications,” Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 93702E (8 February 2015); doi: 10.1117/12.2076115; https://doi.org/10.1117/12.2076115

6. A. Vizbaras, E. Dvinelis, M. Greibus, A. Trinkunas, D. Kovalenkovas, I. Šimonytė, K. Vizbaras, “High-performance single-spatial mode GaSb type-I laser diodes around 2.1 μm,” Proc. SPIE 8993, Quantum Sensing and Nanophotonic Devices XI, 899319 (31 January 2014); doi: 10.1117/12.2036523; https://doi.org/10.1117/12.2036523

7. A. Vizbaras, E. Dvinelis, A. Trinkūnas, I. Šimonytė, M. Greibus, M. Kaušylas, T. Žukauskas, R. Songaila, K. Vizbaras, “High-performance mid-infrared GaSb laser diodes for defence and sensing applications,” Proc. SPIE 9081, Laser Technology for Defense and Security X, 90810P (9 June 2014); doi: 10.1117/12.2054493;https://doi.org/10.1117/12.2054493


  • Security
  • Sensing
  • Medical
  • Research

Typical Specifications

Physical properties
Min. Length mm ~25
Min. Width mm ~25
Min. Height mm ~15
Weight g ~30
Hermetic - YES
Electrical properties
Typical drive current A ~ 5 A
Voltage per emitter V ~ 1.5 V
Operation mode CW/pulsed CW / QCW / pulsed
Laser isolated from base - YES
Optical properties
Output power W ~1.5 - 2.5 W
Divergence deg 0.25 - 0.5
Boresight accuracy deg 0.06
E-O efficiency % 15