23XX nm SAF gain-chip


Brolis 23XX nm single-angled-facet (SAF) gain-chip offers wide gain-bandwidth for most demanding spectroscopy applications such as carbon monoxide (CO), methane, N2O  sensing. Our 2.3 micron gain chip offers access to over 100 nm of spectral band. SAF gain-chip can be used as stand-alone broadband source – i.e. SLD for liquid solution sensing offering up to 40 mW CW output power or as gain medium with over 100 nm tuning around 2280 nm in external cavity configuration. In proper external cavity setup our 2.3 micron gain chip can deliver up to 40 mW CW output power in single mode with > 32 dB side-mode suppression ratio. Typical applications for 2.3 micron gain chip include molecular specroscopy ( CO, CH4, N2), etc), LIDAR and seeding applications.

Available in TO-can (see drawing) and C-mount (see drawing) packages. For more information, please contact us at info.

This product platform is based on Brolis proprietary GaSb type-I laser technology. Our cutting edge laser products are developed in company’s state-of-the art cleanroom facility including advanced multi-wafer molecular beam epitaxy on market’s largest 3-inch GaSb substrate platform. We monitor and control every process: from device simulation, wafer growth, chip fabrication, chip testing and final package. With years of experience in developing beyond-state-of-the-art mid infrared laser technology – we are able to deliver most cutting edge components to market.


  • Security
  • Sensing
  • Medical
  • Research


Typical Specifications

Physical properties
Cavity length mm 1.0
Emitter width um 5
Electrical properties
Threshld current mA 30-50
Voltage V < 1.2
Optical properties
Center wavelength nm 2250
Tuning range nm 2190 - 2310
Output power (Littrow / SLD) mW 16 / 10
Light emission angle degrees 22.2
Mode TE00